Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment
- 15 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (6) , 3229-3232
- https://doi.org/10.1063/1.341541
Abstract
Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.This publication has 15 references indexed in Scilit:
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