Analytical high-current model for the transit time of SiGe HBTs

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 199-202
https://doi.org/10.1109/bipol.1998.741924

Abstract

For accurate modeling the transit time of "true" SiGe HBTs up to high current densities, analytical equations have been derived and verified by both device simulations and measurements. They are part of a new compact model, which has just been implemented into a commercial circuit simulator.

Keywords

This publication has 9 references indexed in Scilit:

Composition grading for base transit time minimization in HBTs: An analytical approach
Solid-State Electronics, 1997
Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
IEEE Journal of Solid-State Circuits, 1996
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
IEEE Transactions on Electron Devices, 1995
TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUIT
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1991
Velocity saturation in the collector of Si/Ge/sub x/Si/sub 1-x//Si HBT's
IEEE Electron Device Letters, 1990
A new effect at high currents in heterostructure bipolar transistors
IEEE Electron Device Letters, 1988
An Ebers-Moll model for the heterostructure bipolar transistor
Solid-State Electronics, 1986
Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities
IEEE Transactions on Electron Devices, 1985
Numerical analysis of heterostructure semiconductor devices
IEEE Transactions on Electron Devices, 1983