Composition grading for base transit time minimization in HBTs: An analytical approach

This publication has 11 references indexed in Scilit:

• Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels
  IEEE Transactions on Electron Devices, 1996
• Improved switch time of I2L at low power consumption by using a SiGe heterojunction bipolar transistor
  Solid-State Electronics, 1995
• Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
  IEEE Transactions on Electron Devices, 1995
• The effect of strain on the base resistance and transit time of ungraded and compositional-graded SiGe HBTs
  Solid-State Electronics, 1994
• The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base
  Solid-State Electronics, 1993
• Composition grading for base transit time minimization in SiGe-base heterojunction bipolar transistors
  Solid-State Electronics, 1993
• Retraction: Bipolar transistor base bandgap grading for minimum delay
  Solid-State Electronics, 1992
• Comparative analysis of the high-frequency performance of Si/Si1−xGex heterojunction bipolar and Si bipolar transistors
  Solid-State Electronics, 1992
• Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors
  Solid-State Electronics, 1992
• Bipolar transistor base bandgap grading for minimum delay
  Solid-State Electronics, 1991