Bipolar transistor base bandgap grading for minimum delay
- 1 April 1991
- journal article
- retracted article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (4) , 421-422
- https://doi.org/10.1016/0038-1101(91)90174-w
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- A new effect at high currents in heterostructure bipolar transistorsIEEE Electron Device Letters, 1988
- Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base regionSolid-State Electronics, 1985