The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base
- 30 November 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (11) , 1571-1578
- https://doi.org/10.1016/0038-1101(93)90029-p
Abstract
No abstract availableKeywords
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