Improved switch time of I2L at low power consumption by using a SiGe heterojunction bipolar transistor
- 31 July 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (7) , 1401-1407
- https://doi.org/10.1016/0038-1101(94)00260-m
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- D.C. and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer using a modified pisces programSolid-State Electronics, 1993
- Switch-off transient analysis for heterojunction bipolar transistors in saturationSolid-State Electronics, 1993
- Profiled current drive for pulsed bipolar transistor switchingElectronics Letters, 1993
- High frequency performance of Si 1−x Ge x /Si 1−y Ge y /Si 1−x Ge x HBTsElectronics Letters, 1993
- Intrinsic gate delay of GaAs/AlGaAs single and double heterostructure I 2 L circuitsElectronics Letters, 1992
- Predicted performance of high-speed integrated-injection logic using InGaAs/InP heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1992
- Low-power CMOS digital designIEEE Journal of Solid-State Circuits, 1992
- Complementary AlGaAs/GaAs HBT I/sup 2/L (CHI/sup 2/L) technologyIEEE Electron Device Letters, 1992
- The development of heterojunction integrated injection logicIEEE Transactions on Electron Devices, 1989
- Some considerations on high-speed injection logicIEEE Journal of Solid-State Circuits, 1977