D.C. and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer using a modified pisces program
- 30 September 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (9) , 1273-1276
- https://doi.org/10.1016/0038-1101(93)90165-m
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- SiGe drift base bipolar technology using Si-GeH/sub 4/ MBE for sub-40 GHz f/sub MAX/ operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Comparative analysis of the high-frequency performance of Si/Si1−xGex heterojunction bipolar and Si bipolar transistorsSolid-State Electronics, 1992
- Unified apparent bandgap narrowing in n- and p-type siliconSolid-State Electronics, 1992
- A numerical study of performance potential of Si/sub 1-x/Ge/sub x/ pseudomorphic heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1992
- Two-dimensional analysis of a BiNMOS transistor operating at 77 K using a modified PISCES programIEEE Transactions on Electron Devices, 1992
- Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxyIEEE Electron Device Letters, 1991
- An analytical model for the determination of the transient response of CML and ECL gatesIEEE Transactions on Electron Devices, 1990
- Predicted propagation delay of Si/SiGe heterojunction bipolar ECL circuitsIEEE Journal of Solid-State Circuits, 1990
- Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base regionSolid-State Electronics, 1985
- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985