Predicted propagation delay of Si/SiGe heterojunction bipolar ECL circuits

This publication has 24 references indexed in Scilit:

• Accurate analytical delay expressions for ECL and CML circuits and their applications to optimizing high-speed bipolar circuits
  IEEE Journal of Solid-State Circuits, 1990
• A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantation
  IEEE Transactions on Electron Devices, 1989
• Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
  IEEE Electron Device Letters, 1989
• High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
  IEEE Electron Device Letters, 1989
• 10.7 GHz frequency divider using double layer silicon bipolar process technology
  Electronics Letters, 1988
• A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes
  IEEE Journal of Solid-State Circuits, 1988
• Study of delay times contributing to the ftof bipolar transistors
  IEEE Electron Device Letters, 1986
• Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985
• Prospects of SST technology for high speed LSI
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985