High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (1) , 33-35
- https://doi.org/10.1109/55.31673
Abstract
A theoretical investigation of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (HBTs) undertaken in an attempt to determine their speed potential is discussed. The analysis is based on a compact transistor model, and devices with self-aligned geometry, including both extrinsic and intrinsic parameters, are considered. For an emitter area of 1*5 mu m/sup 2/, an f/sub t/ of over 75 GHz and f/sub max/ of over 35 GHz were computed at a collector current density of 1*10/sup 5/ A/cm/sup 2/ and V/sub CB/ of 5 V.Keywords
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