Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5) , 229-231
- https://doi.org/10.1109/55.699
Abstract
Forward current ideality factors of 1.01+or-0.3% were obtained over a large current range extending down to 1 pA. Reverse current densities measured 3.5+or-1.2 nA/cm/sup 2/ at a reverse bias of -5 V. Breakdown occurred at the expected value of -22 V and displayed a very sharp current rise of 30 decades/V. Extremely uniform light emission from the junction was observed under a microscope at breakdown, this phenomenon is a visual indication that the material is of high quality and suitable for high-performance minority-carrier devices.Keywords
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