Two-dimensional analysis of a BiNMOS transistor operating at 77 K using a modified PISCES program
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (2) , 348-355
- https://doi.org/10.1109/16.121693
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Delay analysis for BiCMOS driversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Pull-down transient-imposed extrinsic base consideration in BiNMOS transistorsIEEE Transactions on Electron Devices, 1990
- Influence of device parameters on the switching speed of BiCMOS buffersIEEE Journal of Solid-State Circuits, 1989
- Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperatureIEEE Transactions on Electron Devices, 1989
- Optimization of silicon bipolar transistors for high current gain at low temperaturesIEEE Transactions on Electron Devices, 1988
- Analysis and characterization of BiCMOS for high-speed digital logicIEEE Journal of Solid-State Circuits, 1988
- Optimization and scaling of CMOS-bipolar drivers for VLSI interconnectsIEEE Transactions on Electron Devices, 1986
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Principles of the Theory of SolidsPublished by Cambridge University Press (CUP) ,1972