Comparative analysis of the high-frequency performance of Si/Si1−xGex heterojunction bipolar and Si bipolar transistors
- 31 August 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (8) , 1037-1044
- https://doi.org/10.1016/0038-1101(92)90002-t
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Base transit time for SiGe-base heterojunction bipolar transistorsElectronics Letters, 1991
- 50-GHz self-aligned silicon bipolar transistors with ion-implanted base profilesIEEE Electron Device Letters, 1990
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Graded-SiGe-base, poly-emitter heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyIEEE Electron Device Letters, 1988
- Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxyApplied Physics Letters, 1988
- Strain-affected band offsets at Si/Si1−xGex(100) heterojunction interfaces studies with x-ray photoemissionSurface Science, 1987
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975