Strain-affected band offsets at Si/Si1−xGex(100) heterojunction interfaces studies with x-ray photoemission
- 2 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 379-384
- https://doi.org/10.1016/s0039-6028(87)80456-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
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- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984