Composition grading for base transit time minimization in SiGe-base heterojunction bipolar transistors
- 1 August 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (8) , 1161-1164
- https://doi.org/10.1016/0038-1101(93)90197-x
Abstract
No abstract availableKeywords
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