Modulation bandwidth optimisation for unipolar intersubband semiconductor lasers
- 1 February 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Optoelectronics
- Vol. 144 (1) , 44-47
- https://doi.org/10.1049/ip-opt:19971068
Abstract
A rate equation analysis of the direct-current modulation response of intersubband semiconductor lasers is reported using a rate equation model for a triple quantum well structure. It is demonstrated that terahertz modulation bandwidths may be achievable due to the picosecond carrier lifetimes which are characteristic of such structures. A novel feature of the modulation response of intersubband semiconductor lasers is the existence of an optimum output power for achieving maximum modulation bandwidth in a given structure. Further optimisation of the modulation performance is achievable via appropriate design of the coupled quantum well structure.Keywords
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