VBIC95: An improved vertical, IC bipolar transistor model

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 34, 170-177
https://doi.org/10.1109/bipol.1995.493891

Abstract

This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.

Keywords

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