Forward current transients in amorphous silicon p-i-n structures
- 1 October 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 190 (1-2) , 85-94
- https://doi.org/10.1016/0022-3093(95)00260-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Transient forward bias currents in a-Si:H p-i-n devicesJournal of Non-Crystalline Solids, 1993
- Analysis of double injection transients in amorphous silicon p-i-n diodesJournal of Applied Physics, 1992
- Recombination and metastability in amorphous silicon and silicon germanium alloysPublished by Office of Scientific and Technical Information (OSTI) ,1992
- Light induced metastable defects in a-Si:H studied by transient space charge perturbed currentsJournal of Non-Crystalline Solids, 1991
- Interpretation of transient currents in amorphous-silicon hydride p-i-n and n-i-n devicesIEEE Transactions on Electron Devices, 1989
- Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous siliconPhysical Review B, 1989
- Transport and the electronic structure of hydrogenated amorphous siliconPhilosophical Magazine Part B, 1986
- Transient space charge limited currents in a-Si:HJournal of Non-Crystalline Solids, 1984
- Comparison of fast transient response between crystal and amorphous silicon pin photodiodesJournal of Non-Crystalline Solids, 1983
- Study of the electronic structure of amorphous silicon using reverse-recovery techniquesApplied Physics Letters, 1982