InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)
- 1 August 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (8L) , L1103
- https://doi.org/10.1143/jjap.44.l1103
Abstract
This paper describes the successful stacking of multilayered InAs quantum dots (QD) on a GaAs substrate up to 12 layers. The laser oscillated from the ground state under the condition of mirror loss at less than 7–8 cm-1. The extremely low threshold current density per QD-layer of 7 A/cm2/layer was obtained with a lasing wavelength of 1.21 µm at room temperature, which is the lowest value for any known semiconductor laser.Keywords
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