H 2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode
- 9 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (23) , 3096-3097
- https://doi.org/10.1063/1.119102
Abstract
Large-scale integrated fabrication in a H2 containing atmosphere, for example, during the passivation process, can cause serious damage in metal/Pb(Zr,Ti)O3/metal capacitors (i.e., Pt/PZT/Pt capacitors). To reveal the cause of the H2 damage, we investigated the behavior of hysteresis curves and the leakage current of capacitors with a top electrode of Pt, Pd, Au, or Ag. Capacitors with a top electrode of Au or Ag are more resistant to the H2 annealing damage than those of Pt or Pd. We found that the H2 damage was strongly affected by the catalytic activity and adsorptive properties of the top electrode when exposed to H2.Keywords
This publication has 3 references indexed in Scilit:
- Electrode-induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitorsApplied Physics Letters, 1996
- Identification of passive layer in ferroelectric thin films from their switching parametersJournal of Applied Physics, 1995
- Characteristic Change Due to Polarization Fatigue of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3Thin-Film CapacitorsJapanese Journal of Applied Physics, 1994