Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces
- 1 June 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 159-160, 50-61
- https://doi.org/10.1016/s0169-4332(00)00071-4
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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