Rutherford back-scattering and ellipsometry of selenium implanted InP
- 14 October 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (10) , 1915-1922
- https://doi.org/10.1088/0022-3727/14/10/024
Abstract
Good correlation has been found between disorder, measured by Rutherford back-scattering and the extinction coefficient obtained from ellipsometry measurements for 200 keV selenium ions implanted up to a dose of 1*1015 cm-2 at room temperature. Both techniques show that InP becomes amorphous for doses greater than 5*1018 Se+ cm-2. The magnitude of the reflectivity, refractive index and extinction coefficient, obtained from ellipsometry, are presented as a function of dose.Keywords
This publication has 10 references indexed in Scilit:
- Characterization of ion-implanted GaAs by ellipsometryJournal of Applied Physics, 1980
- Carrier removal by implanted IONS in GaAsRadiation Effects, 1980
- Implantation and PH 3 Ambient Annealing of InPJournal of the Electrochemical Society, 1978
- N-type doping of indium phosphide by implantationSolid-State Electronics, 1978
- Ion-implanted n- and p-type layers in InPApplied Physics Letters, 1977
- Characterization of real surfaces by ellipsometrySurface Science, 1972
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970
- Electric Fields Produced by the Propagation of Plane Coherent Electromagnetic Radiation in a Stratified MediumJournal of the Optical Society of America, 1968
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962
- Optical Properties of-Type InPPhysical Review B, 1958