Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature
- 1 March 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (3) , 294-296
- https://doi.org/10.1109/68.556051
Abstract
The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 μm is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is /spl sim/8 kA/cm 2 . The temperature dependence of the threshold current density is described by a high T 0 (107 K) in the 200-320 K temperature range.Keywords
This publication has 9 references indexed in Scilit:
- Type II mid-IR lasers operating above room temperatureElectronics Letters, 1996
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Continuous wave operation of midinfrared (7.4–8.6 μm) quantum cascade lasers up to 110 K temperatureApplied Physics Letters, 1996
- Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlatticesApplied Physics Letters, 1995
- Quantum cascade laser with plasmon-enhanced waveguide operating at 8.4 μm wavelengthApplied Physics Letters, 1995
- Vertical transition quantum cascade laser with Bragg confined excited stateApplied Physics Letters, 1995
- New developments and applications of tunable IR lead salt lasersInfrared Physics & Technology, 1995
- Quantum Cascade LaserScience, 1994
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975