Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system
- 17 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (24) , 2776-2778
- https://doi.org/10.1063/1.104783
Abstract
Silicon photoepitaxy excited by synchrotron radiation (SR) has been observed for the first time. The epitaxial growth is observed even at lower than a 400 °C substrate temperature. The surface of the as-grown film exhibits a 2×1 reconstruction reflection high-energy electron diffraction pattern, indicating two-dimensional growth. At lower than 600 °C, the SR-irradiation growth rate is larger than that of thermal growth. This result suggests that SR irradiation enhances the dynamic surface reactions, such as desorption of hydrogen and surface migration of adsorbed species.Keywords
This publication has 15 references indexed in Scilit:
- Growth kinetics in silane gas-source molecular beam epitaxyJournal of Crystal Growth, 1990
- Gas source Si-MBEJournal of Crystal Growth, 1990
- High Quality Silicon Epitaxy at 500°C using Silane Gas-Source Molecular Beam TechniqueJapanese Journal of Applied Physics, 1989
- Synchrotron radiation stimulated semiconductor processes: Chemical vapor deposition and etchingReview of Scientific Instruments, 1989
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Gas source silicon molecular beam epitaxy using silaneApplied Physics Letters, 1987
- Synchrotron radiation-excited chemical-vapor deposition and etchingJournal of Vacuum Science & Technology B, 1987
- Highly conductive and wide band gap amorphous-microcrystalline mixed-phase silicon films prepared by photochemical vapor depositionJournal of Applied Physics, 1985
- Laser-assisted chemical vapor deposition of Si: Low-temperature (<600 °C) growth of epitaxial and polycrystalline layersJournal of Applied Physics, 1985
- Epitaxial Growth with Light IrradiationJapanese Journal of Applied Physics, 1968