Plasma Reflection and Magnetoreflection in Epitaxial Graded‐Gap CdxHg1−xTe Layers

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Abstract
Measurements of reflectivity and magnetoreflectivity in the region of the plasma edge are performed at 300 K on n‐type graded‐gap epitaxial CdxHg1–xTe layers. From these measurements the position‐dependent effective masses and concentrations of free carriers are determined in the semimetallic region (x < 0.1) and for small composition gradient (≦ 10−3 μm−1). It is found that the position‐dependent effective masses determined by combined reflectivity and magnetoreflectivity measurements in the examined graded‐gap CdxHg1–xTe, at least within experimental error limits, are the same as in homogeneous CdxHg1–xTe crystals with the respective composition x. This result is discussed in the light of the recent effective mass theory for carriers in graded mixed semiconductors.