Non-equilibrium carrier radiative recombination in indium phosphide single crystals
- 16 November 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 80 (1) , 109-118
- https://doi.org/10.1002/pssa.2210800111
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Deep radiative levels in InPJournal of Applied Physics, 1982
- An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InPJournal of Applied Physics, 1982
- Photoluminescence study of native defects in InPApplied Physics Letters, 1981
- A model for the ∼ 1.10eV emission band in InPSolid State Communications, 1980
- Deep levels in Fe-doped InPPhysica Status Solidi (a), 1979
- Incorporation of Si in Liquid Phase Epitaxial InP LayersJournal of the Electrochemical Society, 1976
- Anomalously high ``mobility'' in GaAsJournal of Applied Physics, 1973
- The photoluminescence spectra of excitons bound to group II acceptors in indium phosphideSolid State Communications, 1972
- Electron mobilities and photoluminescence of solution grown indiumphosphide single crystalsJournal of Physics and Chemistry of Solids, 1970
- High mobility n-type Pb0.83Sn0.17 Te single crystalsMaterials Research Bulletin, 1970