Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study

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Abstract
The role of resonant laser enhanced cation surface kinetics in low-temperature molecular beam epitaxial (MBE) growth of compound semiconductors is examined using Monte Carlo techniques. At low temperature, due to reduced cation surface migration, conventional MBE growth produces films with rough surfaces and consequently heterojunctions with rough interfaces. Resonant coupling of photons to bonds of cations at nonkink sites of the growing surface can enhance the cation surface migration rate and thus produce films with smooth surfaces and sharp interfaces. Results of our simulations are presented to establish the potential of resonant laser enhanced surface migration in the MBE growth of compound semiconductors and conditions necessary to achieve this potential are identified.