Influence of alloy disorder on the vibrational properties of Si/Ge superlattices

Publisher Website

15 February 1990

journal article
Published by American Physical Society (APS) in Physical Review B

Vol. 41 (6) , 3769-3777
https://doi.org/10.1103/physrevb.41.3769

Abstract

No abstract available

Keywords

This publication has 23 references indexed in Scilit:

Raman study of the effects of annealing on folded LA and confined LO phonons in GaAs-AlAs superlattices
Physical Review B, 1987
Si-Ge STRAINED LAYER SUPERLATTICES
Le Journal de Physique Colloques, 1987
Phonon modes and Raman scattering in GaAs/ ${Ga}_{1 - x}$ ${Al}_{x}$ As
Physical Review B, 1987
Phonons in the alloy superlattice GaAs-AlxGa1−xAs
Physical Review B, 1987
Raman scattering on confined optical phonons in superlattices: A tool for studying interface thickness
Surface Science, 1986
Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs
Physical Review B, 1978
Adiabatic bond charge model for the phonons in diamond, Si, Ge, and $α - Sn$
Physical Review B, 1977
Theory of Vibrational Properties of Amorphous Alloys: Application to ${Si}_{x} {Ge}_{1 - x}$
Physical Review Letters, 1976
Coherent-Potential Model of Substitutional Disordered Alloys
Physical Review B, 1967
Vibrational Properties of Imperfect Crystals with Large Defect Concentrations
Physical Review B, 1967