Dielectric constant and stability of fluorine doped PECVD silicon oxide thin films
- 1 September 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 283 (1-2) , 30-36
- https://doi.org/10.1016/0040-6090(95)08260-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Electrical Conductions of High Mobility Poly-Si Thin Film Transistors at Low TemperaturesJapanese Journal of Applied Physics, 1994
- A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel InterconnectionsJournal of the Electrochemical Society, 1993
- Hot-carrier aging of the MOS transistor in the presence of spin-on glass as the interlevel dielectricIEEE Electron Device Letters, 1991
- The parylene-aluminum multilayer interconnection system for wafer scale integration and wafer scale hybrid packagingJournal of Electronic Materials, 1989
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981