Hot-carrier aging of the MOS transistor in the presence of spin-on glass as the interlevel dielectric
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (3) , 140-142
- https://doi.org/10.1109/55.75737
Abstract
The effect of introducing a polysilicate or polysiloxane spin-on glass (SOG) as a component of the interlevel dielectric in a multilevel integrated circuit on the hot-carrier aging of the MOS transistor is discussed. It was found that the presence of SOG led to accelerated aging of the MOS transistor: factors of 20 and 5 for silicate and siloxane, respectively. This effect is attributed to water absorbed in the SOG films. a correlation was found for the hot-carrier aging rate and the amount of absorbed water.Keywords
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