Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing

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Abstract
A significant reduction in lasing threshold is achieved by rapid thermal annealing (RTA) for strained InGaAs/GaAs single quantum well lasers grown by molecular beam epitaxy under standard conditions (the growth temperature is 620 °C or less), not especially optimized for lasers. When RTA at 900 °C for 10 s is applied twice to the wafer after the growth, the room-temperature photoluminescence efficiency of the active layer increases by about 80 times and the threshold current decreases by a factor of 5 to 7. We suggest that this enhancement is due to improvement of the quality of the InGaAs quantum well rather than that of the AlGaAs cladding layers.