Growth mechanism of AlGaAs on terraced substrates by low pressure MOVPE
- 1 March 1992
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (3) , 355-359
- https://doi.org/10.1007/bf02660466
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Growth behavior during nonplanar metalorganic vapor phase epitaxyJournal of Applied Physics, 1988
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Channeled-substrate-planar structure AlxGa_1−x As lasers: an analytical waveguide studyApplied Optics, 1978