Valence band edge of ultra-thin silicon oxide near the interface
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 546-549
- https://doi.org/10.1016/s0169-4332(97)00568-0
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology (08455023)
This publication has 4 references indexed in Scilit:
- SiO2 valence band near the SiO2/Si(111) interfaceApplied Surface Science, 1997
- Determination of Valence Band Alignment at Ultrathin SiO2/Si Interfaces by High-Resolution X-Ray Photoelectron SpectroscopyJapanese Journal of Applied Physics, 1995
- Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2×1 SurfaceJapanese Journal of Applied Physics, 1995
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965