Time-of-flight photoconductivity in a-Si:H
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 449-452
- https://doi.org/10.1016/0022-3093(83)90617-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The reversal of drifting excess carriers in an amorphous silicon junctionPhilosophical Magazine Part B, 1983
- Study of the electronic structure of amorphous silicon using reverse-recovery techniquesApplied Physics Letters, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Defect states in doped and compensated-Si: HPhysical Review B, 1981