AlGaN/GaN MOSHFET integrated circuit power converter
- 15 November 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- FPGA based sliding mode control for high frequency power convertersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Dynamic current-voltage characteristics of III-N HFETsIEEE Electron Device Letters, 2003
- An assessment of wide bandgap semiconductors for power devicesIEEE Transactions on Power Electronics, 2003
- Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applicationsIEEE Transactions on Microwave Theory and Techniques, 2003
- Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridgingIEEE Electron Device Letters, 2001
- AlGaN/GaN metal oxide semiconductor heterostructure field effect transistorIEEE Electron Device Letters, 2000
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- Semiconductors for high-voltage, vertical channel field-effect transistorsJournal of Applied Physics, 1982