Simulation and characterization of the selective area growth process
- 27 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (18) , 2617-2619
- https://doi.org/10.1063/1.123915
Abstract
A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments.Keywords
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