Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition
- 1 November 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (11) , 1631-1636
- https://doi.org/10.1007/bf02676823
Abstract
No abstract availableKeywords
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