Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 249-254
- https://doi.org/10.1016/0022-0248(92)90467-w
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBEJournal of Crystal Growth, 1991
- Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substratesJournal of Crystal Growth, 1989
- Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguidesJournal of Crystal Growth, 1988