Pt-silicide source and drain SOI-MOSFET operating in bi-channel modes

Publisher Website

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/drc.1998.731127

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
Japanese Journal of Applied Physics, 1998
Experimental investigation of a PtSi source and drain field emission transistor
Applied Physics Letters, 1995