On particle-mesh coupling in Monte Carlo semiconductor device simulation
- 1 October 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 15 (10) , 1266-1277
- https://doi.org/10.1109/43.541446
Abstract
Improved nearest-grid-point and cloud-in-cell particle-mesh schemes are suggested, and a new nearest-element-center scheme proposed, to help reduce self force and improve the spatial accuracy of forces in Monte Carlo semiconductor device simulation. These schemes are exercised on both one-and two-dimensional model problems. An attempt to design a scheme with reduced self force for unstructured triangular meshes is unsuccessful.Keywords
This publication has 9 references indexed in Scilit:
- On the numerical evaluation of electrostatic fields in composite materialsActa Numerica, 1994
- A particle-tracking method for 3D electromagnetic PIC codes on unstructured meshesComputer Physics Communications, 1992
- Numerical modeling of axisymmetric electron beam devices using a coupled particle-finite element methodIEEE Transactions on Magnetics, 1991
- TRIPIC: Triangular-mesh particle-in-cell codeJournal of Computational Physics, 1990
- Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETsIEEE Transactions on Electron Devices, 1989
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- Computer Simulation Using ParticlesPublished by Taylor & Francis ,1988
- Modeling of 0.1-µm MOSFET on SOI structure using Monte Carlo simulation techniqueIEEE Transactions on Electron Devices, 1986
- Dynamical Screening of Hot Carriers in Semiconductors from a Coupled Molecular-Dynamics and Ensemble Monte Carlo SimulationPhysical Review Letters, 1986