Identification of two bands in the PL spectra of SI LEC GaAs on the basis of a strain model
- 31 July 1986
- journal article
- Published by Elsevier in Materials Letters
- Vol. 4 (5-7) , 286-289
- https://doi.org/10.1016/0167-577x(86)90025-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Distinction between Midgap Levels in LEC n-GaAs Determined by DLTS and Optical Absorption at 1.1 µmJapanese Journal of Applied Physics, 1985
- Deep level photoluminescence commonly present in undoped Czochralski grown GaAsApplied Physics Letters, 1985
- Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1983
- Study of Two Different Deep Levels in Undoped LEC SI–GaAs by Photoluminescence SpectroscopyJapanese Journal of Applied Physics, 1983
- Electrical Resistivity of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC TechniqueJapanese Journal of Applied Physics, 1983
- Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence SpectroscopyJapanese Journal of Applied Physics, 1982
- Undoped semi-insulating LEC GaAs: a model and a mechanismElectronics Letters, 1981