Electron-electron effects in the writing and erasing of dual-dielectric charge-storage cells
- 1 February 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (3) , 131-133
- https://doi.org/10.1063/1.89972
Abstract
We have found an abrupt drop in the capture efficiency of dopant‐induced interfacial states in DDC’s when the stored‐charge density exceeds 7×1012/cm2. The constancy of this number with electric field strength and with increasing capture efficiency from increased induced‐state density suggests Coulombic repulsion ultimately limits writing efficiency. Erasing characteristics are also explained by barrier lowering due to electron‐electron repulsion.Keywords
This publication has 4 references indexed in Scilit:
- Electron-trapping characteristics of W in SiO2Journal of Applied Physics, 1977
- A method of tungsten dopant deposition for dual-dielectric charge-storage cellsIEEE Transactions on Electron Devices, 1977
- Interfacial Dopants for Dual-Dielectric, Charge-Storage CellsBell System Technical Journal, 1974
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969