Improvement of thin-gate oxide integrity using photo-enhanced low-temperature nitridation
- 31 August 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (8) , 1039-1042
- https://doi.org/10.1016/0038-1101(90)90217-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Improvement of thin-gate oxide integrity using through-silicon-gate nitrogen ion implantationIEEE Electron Device Letters, 1987
- Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2Journal of the Electrochemical Society, 1986
- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982
- Photoluminescence Processes of Zn-Doped In1-xGaxP with 0.6<x<1.0Japanese Journal of Applied Physics, 1982
- A Review of infrared spectroscopic studies of vapor-deposited dielectric glass films on siliconJournal of Electronic Materials, 1976