Silicon Consumption During Self-Aligned Titanium Suicide Formation on Shallow Junctions
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Silicon loss during TiSi2 formationJournal of Applied Physics, 1987
- Junction leakage in titanium self-aligned silicide devicesApplied Physics Letters, 1986
- Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologiesJournal of Vacuum Science & Technology B, 1985