Ultra-low-noise InP-MMIC amplifiers for 85-115 GHz
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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- A 140-GHz monolithic low noise amplifierIEEE Microwave and Guided Wave Letters, 1995
- 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/IEEE Electron Device Letters, 1994