Modeling the bias and scaling dependence of drain current fluctuations due to single carrier trapping in submicron MOSFET's
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Low Frequency Noise in Small MOS DevicesMRS Proceedings, 1992
- A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistorsIEEE Transactions on Electron Devices, 1990