A channeling/RBS study of SOI structures by SIMOX using MeV ions

This publication has 8 references indexed in Scilit:

• Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps
  Applied Physics Letters, 1989
• An ERD/RBS/PIXE apparatus for surface analysis and channeling
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
• Mechanisms of buried oxide formation by ion implantation
  Applied Physics Letters, 1987
• High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing
  Applied Physics Letters, 1986
• Microstructure of silicon implanted with high dose oxygen ions
  Applied Physics Letters, 1985
• Vertical bipolar transistors on buried silicon nitride layers
  IEEE Electron Device Letters, 1984
• Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV
  Applied Physics A, 1980
• C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon
  Electronics Letters, 1978