Light Emission from Quantum Well Structures Containing ZnS, ZnSe, and Related Alloys
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S) , 663-668
- https://doi.org/10.1143/jjap.32.663
Abstract
Properties of blue and blue-green laser diodes with ZnCdSe single- and multiple-quantum-well active regions are discussed. Blue, blue-green, and green light emitting diodes which employ ZnCdSe or ZnSTeSe as the active region of double heterostructure devices have also been prepared and tested. Properties of ZnS-ZnSSe and ZnS-ZnCdS quantum well structures are also reported. These structures emit intense photoluminescence in the ultraviolet spectral region.Keywords
This publication has 22 references indexed in Scilit:
- Molecular-beam epitaxy of ZnS using an elemental S sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Properties of ZnSe-ZnSe0.9Te0.1 and ZnSe-Zn0.9Cd0.1Se multilayersJournal of Crystal Growth, 1992
- Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layersJournal of Crystal Growth, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodesJournal of Crystal Growth, 1991
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam EpitaxyMRS Proceedings, 1989
- Exciton trapping at tellurium iso-electronic centres in ZnSe-ZnTe superlatticesSemiconductor Science and Technology, 1988