Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodes
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 829-832
- https://doi.org/10.1016/0022-0248(91)91091-n
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Substitutional doping of ZnSe filmsJournal of Crystal Growth, 1991
- Characterization of p-type ZnSeJournal of Applied Physics, 1990
- Electrical characterization of p-type ZnSeApplied Physics Letters, 1989
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Photoluminescence spectra of oxygen-doped ZnSe grown by molecular-beam epitaxyPhysical Review B, 1989
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Detection and control of impurity incorporation in MBE-grown ZnSeJournal of Crystal Growth, 1988
- Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion dopingApplied Physics Letters, 1986
- Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxyJournal of Applied Physics, 1985