An innovative modelization of loss mechanism in silicon integrated inductors
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing
- Vol. 46 (12) , 1453-1460
- https://doi.org/10.1109/82.809531
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Modeling, characterization and design of monolithic inductors for silicon RFICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Design and characterization of Si integrated inductorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- On-chip spiral inductors with patterned ground shields for Si-based RF ICsIEEE Journal of Solid-State Circuits, 1998
- Multilevel-spiral inductors using VLSI interconnect technologyIEEE Electron Device Letters, 1996
- High Q inductors for wireless applications in a complementary silicon bipolar processIEEE Journal of Solid-State Circuits, 1996
- Design of Planar Rectangular Microelectronic InductorsIEEE Transactions on Parts, Hybrids, and Packaging, 1974