High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor
- 1 December 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 182 (1-2) , 11-16
- https://doi.org/10.1016/s0022-0248(97)00316-3
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Study of GaN and InGaN films grown by metalorganic chemical vapour depositionJournal of Crystal Growth, 1997
- MOVPE of GaN using a specially designed two-flow horizontal reactorJournal of Crystal Growth, 1997
- Growth defects in GaN films on 6H–SiC substratesApplied Physics Letters, 1996
- Growth defects in GaN films on sapphire: The probable origin of threading dislocationsJournal of Materials Research, 1996
- Chemical approaches to the Metalorganic CVD of Group‐III NitridesChemical Vapor Deposition, 1995
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphireApplied Physics Letters, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989